Programme
Delegates not attending Tutorial Day (Early Career Researcher day) can arrive Sunday for Registration.
| Saturday 16th July 2011 | |
| Tutorial Day | |
| Sunday 17th July 2011 | |
| 17:00 onwards | Registration - Rutherford Hotel, Nelson |
| 18:15 | Welcome function |
| Monday 18th July 2011 | |
| Plenary Session | |
| 10:20 - 10:45 | Coffee Break |
| Parallel Oral Sessions Session 1: PV I Session 2: Theory |
|
| 12:30 - 13:45 | Lunch |
| Parallel Oral Sessions Session 1: PV II Session 2: Defects in SiC |
|
| Coffee Break | |
| Poster Session (2 hour) | |
| Evening Free for Dinner in City | |
| Tuesday 19th July 2011 | |
| Parallel Oral Sessions Session 1: Defects in nanostructures Session 2: Defects in Ge I |
|
| 10:20 - 10:45 | Coffee Break |
| Parallel Oral Sessions Session 1: Defects in nitrides I Session 2: Defects in Oxides I |
|
| 12:30 - 13:45 | Lunch |
| Parallel Oral Sessions Session 1: Rare earths Session 2: Defects in Si I |
|
| Poster Session (3 hour) | |
| Evening Free for Dinner in City (plus Committee Dinner) | |
| Wednesday 20th July 2011 | |
| Parallel Oral Sessions Session 1: Defects in Ge II Session 2: Defects in Organic semiconductors |
|
| 10:20 - 10:45 | Coffee Break |
| Parallel Oral Sessions Session 1: Defects in Oxides II Session 2: Defects in Si II |
|
| 12:30 - 13:45 | Lunch |
| 12:45 - 18:00 | Optional - Local Excursions (varying length) |
| Evening Free for Dinner in City | |
| Thursday 21st July 2011 | |
| Parallel Oral Sessions Session 1: Defects in Compound semiconductors Session 2: Defects in Oxides III |
|
| 10:20 - 10:45 | Coffee Break |
| Parallel Oral Sessions Session 1: Defects in Oxides IV Session 2: Defects in nitrides II |
|
| 12:30 - 13:45 | Lunch |
| Parallel Oral Sessions Session 1: Defects in Si III |
|
| Poster Session (3 hour) | |
| 18:30 onwards | Conference Banquet - World of Wearable Art, Nelson |
| Friday 22nd July 2011 | |
| Parallel Oral Sessions Session 1: Defects in Magnetic semiconductors I Session 2: Defects in Si IV |
|
| 10:20 - 10:45 | Coffee Break |
| Parallel Oral Sessions Session 1: Defects in Magnetic semiconductors II Session 2: Defects in Si V |
|
| 12:30 - 13:00 | End of Conference |
Operational Guidelines
Plenary: 40 minutes plus 5 minutes Q&A
Invited: 35 minutes plus 5 minutes Q&A
Contributed: 15 minutes plus 5 minutes Q&A
