Speakers
Confirmed Plenary Speakers:
Confirmed speakers are:
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Dr Peter Broqvist, École Polytechnique Fédérale de Lausanne, Switzerland
First principles studies of the electronic and structural properties at the Ge/GeO2 interface
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Professor Hans Ch. Alt, Munich University of Applied Sciences, Germany
Symmetry and structure of N-O shallow donor complexes in silicon
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Associate Professor Gerd Duscher, University of Tennessee (Knoxville), USA
Atomic and Electronic Structures of Defects at Interfaces and in Two-Dimensional Semiconductors
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Associate Professor Andy Edgar, Victoria University
NZ Electrically and Optically-Detected Electron Spin Resonance in PPV-based Organic Light Emitting Diodes -
Dr Beatrice Fraboni, University of Bologna, Italy
Ion implantation effects on organic thin film transistors -
Professor Shinji Kuroda, University of Tsukuba, Japan
Phase separation in magnetic semiconductors: Coherent aggregation of magnetic ions vs. precipitation of magnetic nanoclusters -
Associate Professor Daniel MacDonald, Australian National University, Australia
Properties of iron in silicon solar cells: recombination activity, gettering, and detection methods
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Dr Maria Miritello, University of Catania, Italy
Rare earth based compounds for photonic and photovoltaic applications -
Dr Shelly Moram, University of Cambridge, UK
Evidence for dislocation atmospheres in the III-nitrides -
Dr John Murphy, University of Oxford, UK
The effect of silicon nitride and silicon carbide precipitates on the mechanical properties of multicrystalline silicon -
Professor Tony Peaker, University of Manchester, UK
Laplace Deep Level Transient Spectroscopy of Silicon ... Embodiment and Evolution
(this talk is dedicated to Professor Leszek Dobaczewski who died in April 2010) -
Professor Roger Reeves, University of Canterbury, New Zealand
Photoluminescence and exciton-phonon coupling in bulk ZnO
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Dr Jenny Wong-Leung, Australian National University, Australia
Defect and Crystal Phase Engineering of III-V Semiconductor Nanowires -
Professor Deren Yang, Zhejiang University, China
Microdefects in germanium-doped Czochralski silicon
